SiGe Inductorless Low Noise Amplifiers up to 30GHz
نویسندگان
چکیده
Abstract — This paper presents the design, implementation and test of inductorless low noise amplifiers implemented on a BiCMOS SiGe technology. A study of LNAs with the available spiral inductors has showed that similar gain and noise figure can be obtained with smaller resistive feedback amplifiers due to the inductors low Q at 30GHz. A wide band amplifier with a 3dB bandwidth from 12 to 30GHz (1dB bandwidth of 11GHz) was obtained with a maximum gain of 10dB and a NF from 5 to 6.5dB. With a simple two stages cascaded amplifier a gain of 13dB and NF of 4dB at 20GHz and a gain of 7dB and NF of 5.5dB at 30GHz were obtained.
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